Light emitting regions for use with light emitting devices

US8853668B2 · kind B2 · utility

Assignee

• Kabushiki Kaisha Toshiba · JP

Inventors

• Jeff Ramer · Sunnyvale, US
• Steve Ting · Dublin, US

Key dates

• Filing date: Sep 29, 2011
• Grant date: Oct 7, 2014
• Expiry date: Sep 29, 2031

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10H20/825

Abstract

A light emitting device comprises a first layer having an n-type Group III-V semiconductor, a second layer adjacent to the first layer, the second layer comprising an active material that generates light upon the recombination of electrons and holes. The active material in some cases has one or more V-pits at a density between about 1 V-pit/μm2 and 30 V-pits/μm2. The light emitting device includes a third layer adjacent to the second layer, the third layer comprising a p-type Group III-V semiconductor.