Integrated circuit with protection from copper extrusion
US8853760B2 · kind B2 · utility
0Cited by
5References
19Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Nov 9, 2011 |
| Grant date | Oct 7, 2014 |
| Priority date | — |
| Expiry date | May 15, 2032 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D89/10
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
An integrated circuit may include an element placed in an insulating region adjacent to a copper metallization level and including a barrier layer in contact with a metallization level. The element may be electrically connected to and spaced away from a copper line of the metallization level by way of an electrical link passing through the barrier layer and including an electrically conductive material different from copper in direct contact with the copper line.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.