High voltage semiconductor device
US8853787B2 · kind B2 · utility
5Cited by
3References
15Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Nov 30, 2012 |
| Grant date | Oct 7, 2014 |
| Priority date | — |
| Expiry date | Nov 30, 2032 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/516
Abstract
A semiconductor device includes a substrate with one or more active regions and an isolation layer formed to surround an active region and to extend deeper into the substrate than the one or more active regions. The semiconductor further includes a gate electrode, which covers a portion of the active region, and which has one end portion thereof extending over the isolation layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.