Integrated circuit with sensor and method of manufacturing such an integrated circuit
US8853798B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Jul 24, 2012 |
| Grant date | Oct 7, 2014 |
| Priority date | — |
| Expiry date | Aug 5, 2032 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/1461
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
Disclosed is an integrated circuit comprising a substrate (10) carrying a plurality of circuit elements; a metallization stack (12, 14, 16) interconnecting said circuit elements, said metallization stack comprising a patterned upper metallization layer comprising a first metal portion (20) and a second metal portion (21); a passivation stack (24, 26, 28) covering the metallization stack; a gas sensor including a sensing material portion (32, 74) on the passivation stack; a first conductive portion (38) extending through the passivation stack connecting a first region of the sensing material portion to the first metal portion; and a second conductive portion (40) extending through the passivation stack connecting a second region of the sensing material portion to the second metal portion. A method of manufacturing such an IC is also disclosed.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.