Zinc oxide precursor containing alkyl zinc halide and method of depositing zinc oxide-based thin film using the same
US8858694B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Nov 19, 2012 |
| Grant date | Oct 14, 2014 |
| Priority date | — |
| Expiry date | Nov 19, 2032 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC23C16/407
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A zinc oxide precursor for use in deposition of a zinc oxide-based thin film contains an alkyl zinc halide having the following formula: R—Zn—X, where R is an alkyl group CnH2n+1, and X is a halogen group. The n is a number ranging from 1 to 4, and the alkyl group is one selected from among a methyl group, an ethyl group, an i-propyl group and a t-butyl group. The halogen group contains one selected from among F, Br, Cl and I. A method of depositing a zinc oxide-based thin film includes loading a substrate into a deposition chamber; and supplying the zinc oxide precursor which contains the above-described alkyl zinc halide and an oxidizer into the deposition chamber and forming a zinc oxide-based thin film on the substrate via chemical vapor deposition. The zinc oxide-based thin film is deposited on the substrate via atmospheric pressure chemical vapor deposition.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.