Thick film paste containing bismuth-tellurium-oxide and its use in the manufacture of semiconductor devices
US8858842B2 · kind B2 · utility
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16Claims
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Key dates
| Filing date | Apr 3, 2012 |
| Grant date | Oct 14, 2014 |
| Priority date | — |
| Expiry date | Dec 19, 2032 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02E10/50
- WIPO fieldMaterials, metallurgy
- WIPO sectorChemistry
Abstract
The present invention is directed to an electroconductive thick film paste composition comprising Ag and a Pb-free bismuth-tellurium-oxide both dispersed in an organic medium. The present invention is further directed to an electrode formed from the paste composition and a semiconductor device and, in particular, a solar cell comprising such an electrode. The present invention is also directed to the bismuth-tellurium oxide that is a component of thick film pastes.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.