Microwave plasma reactors and substrates for synthetic diamond manufacture
US8859058B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 14, 2011 |
| Grant date | Oct 14, 2014 |
| Priority date | — |
| Expiry date | Dec 14, 2031 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T428/12993
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A microwave plasma reactor for manufacturing synthetic diamond material via chemical vapor deposition, the microwave plasma reactor comprising: a microwave generator configured to generate microwaves at a frequency f; a plasma chamber comprising a base, a top plate, and a side wall extending from said base to said top plate defining a resonance cavity for supporting a microwave resonance mode between the base and the top plate; a microwave coupling configuration for feeding microwaves from the microwave generator into the plasma chamber; a gas flow system for feeding process gases into the plasma chamber and removing them therefrom; a substrate holder disposed in the plasma chamber and comprising a supporting surface for supporting a substrate; and a substrate disposed on the supporting surface, the substrate having a growth surface on which the synthetic diamond material is to be deposited in use, wherein the substrate dimensions and location within the resonance cavity are selected to generate a localized axisymmetric Ez electric field profile across the growth surface in use, the localized axisymmetric Ez electric field profile comprising a substantially flat central portion bou…
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.