Semiconductor device and method for manufacturing same
US8859307B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Aug 31, 2012 |
| Grant date | Oct 14, 2014 |
| Priority date | — |
| Expiry date | Aug 31, 2032 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/351
- WIPO fieldMachine tools
- WIPO sectorMechanical engineering
Abstract
According to an embodiment, a method for manufacturing a semiconductor device includes a placement step and a bonding step. The placement step faces a semiconductor active portion toward a support substrate portion via a bonding portion disposed between the semiconductor active portion and the support substrate portion. The bonding portion includes a bonding layer and a light absorption layer, absorptance of the light absorption layer for laser light being higher than or equal to absorptance of the bonding layer for the laser light. The bonding step bonds the semiconductor active portion and the support substrate portion by irradiating the light absorption layer with the laser light through the support substrate portion and melting the bonding layer by thermal conduction from the light absorption layer heated by the laser light.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.