Method for integrating MEMS microswitches on GaN substrates comprising electronic power components
US8859318B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | May 7, 2010 |
| Grant date | Oct 14, 2014 |
| Priority date | — |
| Expiry date | May 7, 2030 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01H59/0009
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
Methods of fabrication of electronic modules comprise, on the one hand, power electronic components fabricated on a substrate made of gallium nitride (GaN) and, on the other hand, micro-switches using electrostatic activation of the MEMS (Micro Electro Mechanical System) type. The electronic components and the micro-switches are fabricated on a single gallium nitride substrate and the fabrication method comprises at least the following steps: fabrication of the power components on the gallium nitride substrate; deposition of a first common passivation layer on said components and on the substrate; fabrication of the micro-switches on said substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.