Methods of forming photo detectors
US8859319B2 · kind B2 · utility
17Cited by
3References
19Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Sep 12, 2012 |
| Grant date | Oct 14, 2014 |
| Priority date | — |
| Expiry date | Jan 26, 2033 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02P70/50
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
Methods of forming photo detectors are provided. The method includes providing a semiconductor layer on a substrate, forming a trench in the semiconductor layer, forming a first single crystalline layer and a second single crystalline layer using a selective single crystalline growth process in the trench, and patterning the first and second single crystalline layers and the semiconductor layer to form a first single crystalline pattern, a second single crystalline pattern and an optical waveguide.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.