Process for producing indium oxide-containing layers

US8859332B2 · kind B2 · utility

Assignee

• EVONIK DEGUSSA GMBH · DE

Inventors

• Juergen Steiger · Taipei, TW
• Duy Vu Pham · Oberhausen, DE
• Heiko Thiem · Bensheim, DE
• Alexey Merkulov · Ludwigshafen, DE
• Arne Hoppe · Herne, DE

Key dates

• Filing date: Oct 26, 2011
• Grant date: Oct 14, 2014
• Expiry date: Oct 26, 2031

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D64/60
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

The present invention relates to a liquid phase process for producing indium oxide-containing layers, in which a coating composition preparable from a mixture comprising at least one indium oxide precursor and at least one solvent and/or dispersion medium, in the sequence of points a) to d), a) is applied to a substrate, and b) the composition applied to the substrate is irradiated with electromagnetic radiation, c) optionally dried and d) converted thermally into an indium oxide-containing layer, where the indium oxide precursor is an indium halogen alkoxide of the generic formula InX(OR)2 where R is an alkyl radical and/or alkoxyalkyl radical and X is F, Cl, Br or I and the irradiation is carried out with electromagnetic radiation having significant fractions of radiation in the range of 170-210 nm and of 250-258 nm, to the indium oxide-containing layers producible with the process, and the use thereof.