CMOS transistors, fin field-effect transistors and fabrication methods thereof

US8859358B2 · kind B2 · utility

Assignee

• Semiconductor Manufacturing International Corp. · CN

Inventors

• Dongjiang Wang · Shanghai, CN
• Steven Zhang · Shanghai, CN

Key dates

• Filing date: Jun 19, 2013
• Grant date: Oct 14, 2014
• Expiry date: Jun 19, 2033

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D30/62

Abstract

A method is provided for fabricating a transistor. The method includes providing a semiconductor substrate; and configuring a channel region along a first direction. The method also includes forming trenches at both sides of the channel region along a second direction; and forming a magnetic material layer in each of the trenches. Further, the method includes magnetizing the magnetic material layers to form a magnetic field in the channel region between adjacent magnetic material layers; and forming source/drain regions at both ends of the channel region along the first direction.