Patent · US Active

Solution-assisted carbon nanotube placement with graphene electrodes

US8859439B1 · kind B1 · utility

12Cited by

2References

11Claims

0Family size

Assignees

International Business Machines Corporation · US
Karlsruhe Institute of Technology · DE
TAIWAN BLUESTONE TECHNOLOGY LTD. · TW

Inventors

Phaedon Avouris · Yorktown Heights, US
Christos D. Dimitrakopoulos · Baldwin Place, US
Damon B. Farmer · White Plains, US
Mathias B. Steiner · Rio de Janeiro, BR
Michael Engel · Karlsruhe, DE
Ralph Krupke · Blankenloch, DE
Yu-Ming Lin · Hsinchu, TW

Key dates

Filing date	Mar 28, 2013
Grant date	Oct 14, 2014
Priority date	—
Expiry date	Apr 9, 2033

Classification

Technology area (CPC Y)Emerging Cross-Sectional Technologies
CPC primaryY10S977/742
WIPO fieldMicro-structural and nano-technology
WIPO sectorChemistry

Abstract

A semiconductor device includes a substrate having at least one electrically insulating portion. A first graphene electrode is formed on a surface of the substrate such that the electrically insulating portion is interposed between a bulk portion of the substrate and the first graphene electrode. A second graphene electrode formed on the surface of the substrate. The electrically insulating portion of the substrate is interposed between the bulk portion of the substrate and the second graphene electrode. The second graphene electrode is disposed opposite the first graphene electrode to define an exposed substrate area therebetween.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.