Method and system for manufacturing semiconductor device
US8859441B2 · kind B2 · utility
0Cited by
2References
6Claims
0Family size
Inventors
Key dates
| Filing date | Apr 5, 2012 |
| Grant date | Oct 14, 2014 |
| Priority date | — |
| Expiry date | Jan 19, 2033 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/691
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The present invention provides a system and method for manufacturing a semiconductor device including a substrate and a high-κ dielectric layer on the substrate. The system comprises a modular track; a substrate-forming chamber connected with the modular track for forming the substrate; and an atomic layer deposition (ALD) chamber connected with the modular track for providing the high-κ dielectric layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.