Thin film transistor substrate, method of manufacturing the same, and display apparatus having the same which improve switching characteristics
US8860032B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | May 14, 2009 |
| Grant date | Oct 14, 2014 |
| Priority date | — |
| Expiry date | Apr 11, 2031 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/67
Abstract
A thin film transistor substrate that includes a substrate, first and second gate electrodes that are formed on the substrate, a gate insulating layer that is formed on the first and second gate electrodes, a first semiconductor and a second semiconductor that are formed on the gate insulating layer, and that overlap the first gate electrode and the second gate electrode, respectively, a first source electrode and a first drain electrode that are formed on the first semiconductor, and positioned opposed to and spaced from each other, a source electrode connected to the first drain electrode and a second drain electrode positioned opposed to and spaced from the second source electrode, wherein the second source and second drain electrodes are formed on the second semiconductor, and a pixel electrode that is electrically connected to the second drain electrode, a method of manufacturing the same, and a display apparatus having the same.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.