Patent · US Active

Optoelectronic semiconductor device

US8860065B2 · kind B2 · utility

3Cited by
45References
20Claims
0Family size

Assignee

Inventors

Key dates

Filing dateJan 4, 2011
Grant dateOct 14, 2014
Priority date
Expiry dateJul 18, 2031

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH10H20/8516

Abstract

An embodiment of the invention discloses an optoelectronic semiconductor device. The optoelectronic semiconductor comprises a unit having a plurality of electrical connectors with top surfaces; an insulating material surrounding each of the plurality of electrical connectors, wherein each of the top surfaces are exposed through the insulating material; a semiconductor system, having a side surface directly covered by the insulation material, electrically connected to the plurality of electrical connectors and being narrower in width than both of the unit and the insulating material; an electrode formed on the semiconductor system at a position not corresponding to the plurality of electrical connectors; and a layer provided on the semiconductor system at a side opposite to the electrode and configured to laterally exceed outside more than one outermost boundary of the plurality of electrical connectors.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.