Semiconductor light emitting device

US8860075B2 · kind B2 · utility

Assignee

• Kabushiki Kaisha Toshiba · JP

Inventors

• Miyuki Izuka · Yokohama, JP
• Susumu Obata · Yokohama, JP
• Akiya Kimura · Yokohama, JP
• Akihiro Kojima
• Yosuke Akimoto · Yokohama, JP
• Yoshiaki Sugizaki · Yokohama, JP

Key dates

• Filing date: Aug 8, 2013
• Grant date: Oct 14, 2014
• Expiry date: Aug 8, 2033

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10H20/855

Abstract

According to one embodiment, a semiconductor light emitting device includes a semiconductor layer, a p-side electrode, an n-side electrode, a p-side metal pillar, an n-side metal pillar, and an insulator. The semiconductor layer includes a first surface, a second surface opposite to the first surface, and a light emitting layer. The p-side metal pillar includes a p-side external terminal. The n-side metal pillar includes an n-side external terminal. At least one selected from an area and a planar configuration of the p-side external terminal is different from at least one selected from an area and a planar configuration of the n-side external terminal.