Capacitors and semiconductor devices including the same
US8860115B2 · kind B2 · utility
4Cited by
1References
11Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Mar 12, 2013 |
| Grant date | Oct 14, 2014 |
| Priority date | — |
| Expiry date | Mar 12, 2033 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D1/716
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A capacitor includes a lower electrode having a curved surface, a first seed on a sidewall of the lower electrode, which the first seed includes a metal silicide and has a shape corresponding to the curved surface of the lower electrode, a dielectric layer on the lower electrode, the dielectric layer covering the first seed, and an upper electrode on the dielectric layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.