Trench power device and manufacturing method thereof
US8860134B1 · kind B1 · utility
Assignee
Inventor
Key dates
| Filing date | Sep 3, 2013 |
| Grant date | Oct 14, 2014 |
| Priority date | — |
| Expiry date | Sep 3, 2033 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/157
Abstract
A trench power device includes a semiconductor layer, a trench gate structure, a trench source structure, and a contact. The semiconductor layer has an epitaxial layer, a doped body region, a S/D region, and a doped contact-carrying region. The doped body region is formed in the epitaxial layer, the S/D region is formed in the doped body region, and the doped contact-carrying region is formed in the doped body region and outside a projecting portion defined by orthogonally projecting from the S/D region to the doped body region. The trench gate structure is embedded in the S/D region, the doped body region, and the epitaxial layer. The trench source structure is embedded in the doped body region and the epitaxial layer, and is connected to the doped contact-carrying region. The contact is connected to the S/D region and the doped contact-carrying region.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.