CMOS compatible silicon differential condenser microphone and method for manufacturing the same
US8860154B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Mar 11, 2011 |
| Grant date | Oct 14, 2014 |
| Priority date | — |
| Expiry date | Mar 11, 2031 |
Classification
- Technology area (CPC B)Performing Operations; Transporting
- CPC primaryB81B2207/015
- WIPO fieldAudio-visual technology
- WIPO sectorElectrical engineering
Abstract
The present invention provides a CMOS compatible silicon differential condenser microphone and a method of manufacturing the same. Said microphone comprises a silicon substrate, wherein a CMOS circuitry is accommodated thereon; a first rigid conductive perforated backplate supported on the silicon substrate with an insulating layer inserted therebetween; a second rigid perforated backplate formed above the first backplate, including CMOS passivation layers and a metal layer sandwiched between the CMOS passivation layers as an electrode plate of the second plate, wherein an air gap, with a spacer forming its boundary, is provided between the opposite perforated areas of the first backplate and the second backplate; a compliant diaphragm provided between the first backplate and the second backplate, wherein a back hole is formed to be open in the silicon substrate underneath the first backplate so as to allow sound pass through, and the diaphragm and the first backplate form a first variable condenser, the diaphragm and the second backplate form a second variable condenser, and the first variable condenser and the second variable condenser form differential condensers.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.