Neutron detection using GD-loaded oxide and nitride heterojunction diodes

US8860161B2 · kind B2 · utility

Assignee

• Quantum Devices, Inc. · US

Inventors

• Peter A. Dowben · Crete, US
• Jinke Tang · Laramie, US
• David S. Wisbey · Lafayette, US

Key dates

• Filing date: Jul 5, 2012
• Grant date: Oct 14, 2014
• Expiry date: Jan 22, 2033

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10F30/29

Abstract

Solid state neutron detection utilizing gadolinium as a neutron absorber is described. The new class of narrow-gap neutron-absorbing semiconducting materials, including Gd-doped HfO2, Gd-doped EuO, Gd-doped GaN, Gd2O3 and GdN are included in three types of device structures: (1) a p-n heterostructure diode with a ˜30 μm Gd-loaded semiconductor grown on a conventional semiconductor (Si or B-doped Si); (2) a p-n junction or a p-i-n trilayer diode with a Gd-loaded semiconductoron one side and single-crystal semiconducting Li2B4O7 layer on the other side of the heterojunction; and (3) a p-n junction or a p-i-n trilayer diode with a Gd-loaded semiconductoron on one side and a boron nitride (BN) semiconductor layer on the other side of the heterojunction.