Film capacitor element, film capacitor, and method of producing the film capacitor element
US8861178B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Feb 27, 2013 |
| Grant date | Oct 14, 2014 |
| Priority date | — |
| Expiry date | Apr 21, 2033 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01G4/33
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A film capacitor element including a base dielectric film layer 12, a vapor-deposition metal film layer 14 formed on the base dielectric film layer 12 and consisting of a first film portion 20 and a second film portion 22 that are spaced apart from each other by a margin portion 18, and a dielectric covering film layer 16 which is formed integrally on the second film portion 22 by vapor-deposition polymerization or coating and which has a covering portion 30 which fills the margin portion 18 and covers an entire area of an end face of the second film portion 22 on the side of the margin portion 18. The first film portion 20 including a non-covered portion 34 which is not covered by the dielectric covering film layer 16.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.