Memory cell
US8861254B2 · kind B2 · utility
3Cited by
2References
22Claims
0Family size
Assignees
Inventors
Key dates
| Filing date | Mar 14, 2012 |
| Grant date | Oct 14, 2014 |
| Priority date | — |
| Expiry date | Dec 12, 2032 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N70/884
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
The present invention is a non-volatile memory cell containing at least two distinct memory zones, each formed in a resistivity-change material, the memory cell containing at least one heating element for each memory zone, each heating element having at least two ends, one of which is connected to a supply line and the other of which is brought into contact with the resistivity-change material, characterized in that the resistivity-change material is arranged in a single block common to each of the memory zones of the memory cell, so as to create distinct memory zones locally.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.