Approximate multi-level cell memory operations
US8861270B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 11, 2013 |
| Grant date | Oct 14, 2014 |
| Priority date | — |
| Expiry date | Mar 11, 2033 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C16/3495
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
The present technology relaxes the precision (or full data-correctness-guarantees) requirements in memory operations, such as writing or reading, of MLC memories so that an application may write and read a digital data value as an approximate value. Types of MLCs include Flash MLC and MLC Phase Change Memory (PCM) as well as other resistive technologies. Many software applications may not need the accuracy or precision typically used to store and read data values. For example, an application may render an image on a relatively low resolution display and may not need an accurate data value for each pixel. By relaxing the precision or correctness requirements is a memory operation, MLC memories may have increased performance, lifetime, density, and/or energy efficiency.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.