Polysilicon photodetector, methods and applications
US8861909B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Feb 16, 2012 |
| Grant date | Oct 14, 2014 |
| Priority date | — |
| Expiry date | Jul 28, 2032 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02E10/546
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A silicon photonic photodetector structure, a method for fabricating the silicon photonic photodetector structure and a method for operating a silicon photonic photodetector device that results from the photonic photodetector structure each use a strip waveguide optically coupled with a polysilicon material photodetector layer that may be contiguous with a semiconductor material slab to which is located and formed a pair of electrical contacts separated by the polysilicon material photodetector layer. Within the foregoing silicon photonic photodetector structure and related methods the polysilicon material photodetector layer includes defect states suitable for absorbing an optical signal from the strip waveguide and generating an electrical output signal using at least one of the electrical contacts when the optical signal includes a photon energy less than a band gap energy of a polysilicon material from which is comprised the polysilicon material photodetector layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.