Reading/writing control method and system for nonvolatile memory storage device
US8862855B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jul 19, 2010 |
| Grant date | Oct 14, 2014 |
| Priority date | — |
| Expiry date | Dec 26, 2031 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG06F2212/7203
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
The present invention is adapted to data storage technology field, and provides a reading/writing control method and system for nonvolatile memory, the method including the following steps: dividing valid blocks in the nonvolatile memory into different zones, the zones including at least one data zone having fixed number of valid blocks and one exchange zone having at least two valid blocks; creating a mapping table of logic blocks and physical blocks in each zone; establishing a mapping table of logic pages and physical pages in the blocks based on redundant area information of pages in the blocks, and storing the mapping table of the logic blocks and physical blocks in each zone and the mapping table of logic pages and physical pages in each block in a private data area; and writing data segments in an idle page of the blocks of the data zones in sequence, or reading data segments from valid pages in the data zones, thus the data reading/writing speed and efficiency is promoted.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.