Manufacturing method for compound semiconductor light-emitting element
US8865494B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Feb 18, 2011 |
| Grant date | Oct 21, 2014 |
| Priority date | — |
| Expiry date | Jun 12, 2031 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/032
Abstract
A compound semiconductor light-emitting element characterized by high transmittance of an electrically conductive film, low contact resistance and low sheet resistance of electrically conductive film is manufactured. The manufacturing method for a compound semiconductor light-emitting element of the present invention includes the steps of: forming a semiconductor layer formed of a group III nitride semiconductor, including a light-emitting layer on a substrate; forming an electrically conductive film on the side of the semiconductor layer opposite to the side contacting the substrate; conducting first annealing on the electrically conductive film in an atmosphere containing oxygen; conducting second annealing on the electrically conductive film in an atmosphere not containing oxygen; and exposing the electrically conductive film to atmospheric air between the step of conducting first annealing and the step of conducting second annealing.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.