Thin-film solar cell
US8865512B2 · kind B2 · utility
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8References
19Claims
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Key dates
| Filing date | May 27, 2010 |
| Grant date | Oct 21, 2014 |
| Priority date | — |
| Expiry date | Jan 29, 2033 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02P70/50
Abstract
Thin-film solar cells of the CIGS-type use two integrally formed buffer layers, a first ALD Zn(O,S) buffer layer on top of the CIGS-layer and a second ALD ZnO-buffer layer on top of the first buffer layer. Both buffer layers are deposited in the same process step using ALD (atom layer deposition). The technology also relates to a method of producing the cell and a process line for manufacturing of the cell structure.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.