Method for manufacturing thin-film transistor active device and thin-film transistor active device manufactured with same

US8865517B2 · kind B2 · utility

Assignee

• TENCENT TECHNOLOGY (SHENZHEN) COMPANY LIMITED · CN

Inventors

• Chenglung Chiang · Nanhu, CN
• Polin Chen · Nanhu, CN

Key dates

• Filing date: Oct 12, 2012
• Grant date: Oct 21, 2014
• Expiry date: Jan 22, 2033

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D86/60

Abstract

The present invention provides a method for manufacturing thin-film transistor active device and a thin-film transistor active device manufactured with the method. The method includes providing a substrate; forming a gate terminal on the substrate through sputtering and masking operations; forming a gate insulation layer on the gate terminal through CVD; forming an oxide semiconductor layer on the gate insulation layer through sputtering and masking operations; forming a first protection layer on the oxide semiconductor layer through CVD, forming a metal layer on the first protection layer through sputtering, and forming a data line electrode through masking operation; forming a second protection layer on the first protection layer and the data line electrode through CVD and forming first, second, and third bridging holes through masking operation; forming a transparent conductive layer on the second protection layer through sputtering and patternizing the transparent conductive layer through masking operation.