Method of forming a phase change material layer pattern and method of manufacturing a phase change memory device
US8865558B2 · kind B2 · utility
5Cited by
3References
22Claims
0Family size
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Key dates
| Filing date | Jul 9, 2012 |
| Grant date | Oct 21, 2014 |
| Priority date | — |
| Expiry date | Jul 14, 2032 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N70/8828
Abstract
A method of forming a phase change material layer pattern includes forming a phase change material layer partially filling an opening through an insulating interlayer. A plasma treatment process is performed on the phase change material layer to remove an oxide layer on a surface of the phase change material layer. A heat treatment process is performed on the phase change material layer to remove a void or a seam in the phase change material layer, sufficiently filling the opening.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.