Method for making epitaxial structure
US8865577B2 · kind B2 · utility
9Cited by
5References
19Claims
0Family size
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Key dates
| Filing date | Nov 13, 2012 |
| Grant date | Oct 21, 2014 |
| Priority date | — |
| Expiry date | Nov 13, 2032 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/832
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for making epitaxial structure is provided. The method includes providing a substrate having an epitaxial growth surface, growing a buffer layer on the epitaxial growth surface; placing a graphene layer on the buffer layer; epitaxially growing an epitaxial layer on the buffer layer; and removing the substrate. The graphene layer includes a number of apertures to expose a part of the buffer layer. The epitaxial layer is grown from the exposed part of the buffer layer and through the apertures.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.