Thin-film transistor
US8866140B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jan 2, 2013 |
| Grant date | Oct 21, 2014 |
| Priority date | — |
| Expiry date | Jan 2, 2033 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/62
Abstract
Making it possible to improve adhesion between the semiconductor layer and the electrodes, realize high-speed operation of the thin-film transistor by enhancing ohmic contact between these members, reliably prevent oxidation of the electrode surfaces, and realize an electrode fabrication process with few processing steps. The thin-film transistor 10 of the present invention includes a semiconductor layer 4 composed of oxide semiconductor, a source electrode 5 and a drain electrode 6 that are layers composed mainly of copper, and oxide reaction layers 22 provided between the semiconductor layer 4 and each of the source electrode 5 and drain electrode 6, and high-conductance layers 21 provided between the oxide reaction layers 22 and semiconductor layer 4.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.