Thin film transistor and method for fabricating the same
US8866141B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 26, 2012 |
| Grant date | Oct 21, 2014 |
| Priority date | — |
| Expiry date | Jan 14, 2033 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D99/00
Abstract
A thin film transistor and a method for fabricating the same are disclosed. The thin film transistor includes: a gate electrode formed on a substrate and having a plurality of horizontal electrode parts spaced apart at regular intervals; a gate insulating film formed over the entire surface of the substrate including the gate electrode; an active pattern formed on the gate insulating film above the plurality of horizontal electrode parts; an etch stop film pattern formed above the active pattern and the gate insulating film so as to overlap top portions of the active pattern and the gate electrode and; a source electrode formed on the active pattern, the gate insulating film, and the etch stop film pattern so as to overlap top portions of adjacent horizontal electrode parts; and a drain electrode formed on the active pattern, the gate insulating film, and the etch stop film pattern so as to overlap top portions of horizontal electrode parts located on the outermost ends.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.