Semiconductor device
US8866151B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 20, 2012 |
| Grant date | Oct 21, 2014 |
| Priority date | — |
| Expiry date | Dec 15, 2032 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/60
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
According to one embodiment, a semiconductor device includes a semiconductor layer of a first conductivity type, a first region of a second conductivity type selectively provided in a first major surface of the semiconductor layer, a second region of the second conductivity type selectively provided in the first major surface and connected to the first region, a first electrode provided in contact with the semiconductor layer and the first region, a second electrode provided in contact with the second region, and a third electrode electrically connected to a second major surface of the semiconductor layer opposite to the first major surface.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.