Betavoltaic apparatus and method
US8866152B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Nov 19, 2010 |
| Grant date | Oct 21, 2014 |
| Priority date | — |
| Expiry date | Jan 15, 2031 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG21H1/06
- WIPO fieldEngines, pumps, turbines
- WIPO sectorMechanical engineering
Abstract
An exemplary thinned-down betavoltaic device includes an N+ doped silicon carbide (SiC) substrate having a thickness between about 3 to 50 microns, an electrically conductive layer disposed immediately adjacent the bottom surface of the SiC substrate; an N− doped SiC epitaxial layer disposed immediately adjacent the top surface of the SiC substrate, a P+ doped SiC epitaxial layer disposed immediately adjacent the top surface of the N− doped SiC epitaxial layer, an ohmic conductive layer disposed immediately adjacent the top surface of the P+ doped SiC epitaxial layer, and a radioisotope layer disposed immediately adjacent the top surface of the ohmic conductive layer. The radioisotope layer can be 63Ni, 147Pm, or 3H. Devices can be stacked in parallel or series. Methods of making the devices are disclosed.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.