Semiconductor device and method of fabricating the semiconductor device
US8866157B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | May 23, 2013 |
| Grant date | Oct 21, 2014 |
| Priority date | — |
| Expiry date | May 23, 2033 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/691
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device may include a first semiconductor layer formed on a substrate, a second semiconductor layer formed on the first semiconductor layer, a source electrode and a drain electrode in contact with the first semiconductor layer or the second semiconductor layer, an opening formed in the second semiconductor layer, an insulating film formed on an inner surface of the opening formed in the second semiconductor layer and above the second semiconductor layer, a gate electrode formed in the opening via the insulating film, and a protective film formed on the insulating film and including an amorphous film containing carbon as a major component.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.