Semiconductor device and method for manufacturing same
US8866158B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 29, 2012 |
| Grant date | Oct 21, 2014 |
| Priority date | — |
| Expiry date | Mar 29, 2032 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/157
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device having a high withstand voltage in which a stable withstand voltage can be obtained and a method for manufacturing the same. A JTE region having a second conductivity type is formed in a port ion on an outer peripheral end side of an SiC substrate from a second conductivity type SiC region in a vicinal portion of a surface on one of sides in a thickness direction of a first conductivity type SiC epitaxial layer. A first conductivity type SiC region having a higher concentration of an impurity having the first conductivity type than that of the SiC epitaxial layer is formed in at least a vicinal portion of a surface on one of sides in a thickness direction of a portion in which the JTE regions are bonded to each other.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.