Photoelectric conversion device and image sensing
US8866205B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Aug 24, 2007 |
| Grant date | Oct 21, 2014 |
| Priority date | — |
| Expiry date | Sep 5, 2031 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F39/8063
Abstract
A photoelectric conversion device is disclosed. The photoelectric conversion device includes a semiconductor substrate having a plurality of photoelectric converters, a multilayer wiring structure arranged on the semiconductor substrate, and a planarized layer arranged on the multilayer wiring structure. The multilayer wiring structure includes a first wiring layer, an interlayer insulation film arranged to cover the first wiring layer, and a second wiring layer serving as a top wiring layer arranged on the interlayer insulation film. The planarized layer covers the interlayer insulation film and the second wiring layer. The second wiring layer is thinner than the first wiring layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.