Nitride semiconductor device
US8866231B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jan 10, 2014 |
| Grant date | Oct 21, 2014 |
| Priority date | — |
| Expiry date | Jan 10, 2034 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/4755
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A nitride semiconductor device includes: first electrode interconnect layers extending in parallel with one another over the nitride semiconductor layer and divided by areas extending across a longitudinal direction of the first electrode interconnect layers; first gate electrodes extending along the first electrode interconnect layers; first gate electrode connecting interconnects extending in associated ones of the areas dividing the first electrode interconnect layers and being in connection to the first gate electrodes; first electrode connecting interconnects formed above the first gate electrode connecting interconnects and being in connection to the first electrode interconnect layers; a first electrode upper interconnects formed on the first electrode connecting interconnects with an interconnect insulating film interposed therebetween, and being in connection to the first electrode connecting interconnects through associated ones of openings of the interconnect insulating film.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.