Patent · US Active

Inductor device and fabrication method

US8866259B2 · kind B2 · utility

1Cited by

5References

17Claims

0Family size

Assignee

Semiconductor Manufacturing International Corp. · CN

Inventors

Jenhao Cheng · Shanghai, CN
Xining Wang · Shanghai, CN
Ling Liu · Shanghai, CN

Key dates

Filing date	Nov 30, 2012
Grant date	Oct 21, 2014
Priority date	—
Expiry date	Feb 14, 2033

Classification

Technology area (CPC H)Electricity
CPC primaryH01L2924/0002
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

Various embodiments provide inductor devices and fabrication methods. In one embodiment, an inductor device can include a first dielectric layer disposed on a semiconductor substrate; a first planar spiral wiring disposed on the first dielectric layer, and optionally one or more second planar spiral wirings disposed over the first planar spiral wiring. Each of the first and the optional second planar spiral wirings can include a first spiral metal wiring and a second spiral metal wiring connected to the first spiral metal wiring. The second spiral metal wiring can include at least two sub-metal-lines isolated with one another.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.