Double pass back side image sensor systems and methods
US8866947B2 · kind B2 · utility
1Cited by
6References
23Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Aug 4, 2011 |
| Grant date | Oct 21, 2014 |
| Priority date | — |
| Expiry date | Aug 16, 2032 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F39/802
- WIPO fieldAudio-visual technology
- WIPO sectorElectrical engineering
Abstract
Double pass back side image (BSI) sensor systems and methods are disclosed. The BSI sensor may include a substrate, pixel reflectors formed on the substrate, and pixel photodiodes fabricated in the substrate, each pixel photodiode positioned over a respective one of the pixel reflectors. Micro-lenses may be formed over each photodiode and an image filter may be formed between the photodiodes and the micro-lenses. The pixels reflectors, photodiodes, micro-lenses, and filter may be formed using CMOS fabrication.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.