Flexible memory and its fabrication process

US8867254B2 · kind B2 · utility

Assignee

• Nanjing University · CN

Inventors

• Yi Zhao · Ithaca, US
• Yi Shi · Shanghai, CN
• Xiangdong Ye · Nanjing, CN

Key dates

• Filing date: Jul 31, 2013
• Grant date: Oct 21, 2014
• Expiry date: Jul 31, 2033

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10B61/00

Abstract

This invention describes the structure and the fabrication method of a flexible memory. The flexible memory includes eight layers. The three function layers are a flexible layer of hall unit, a flexible layer of horizontal lines, and a flexible layer of vertical lines. The main fabrication process of the flexible memory includes the following: the function layers are made on the hard substrates by the traditional nano-micro methods, and then the function layers are transferred on the flexible substrates, finally the whole layers are packaged to form the flexible memory.