3D stacked NAND flash memory array enabling to operate by LSM and operation method thereof
US8867280B2 · kind B2 · utility
9Cited by
3References
11Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Feb 6, 2013 |
| Grant date | Oct 21, 2014 |
| Priority date | — |
| Expiry date | Feb 8, 2033 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C2213/71
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
This invention provides a 3D stacked NAND flash memory array and operation method thereof enabling to operate by LSM (a layer selection by multi-level operation) and to get rid of the waste of unnecessary areas by minimizing the number of SSLs needed for a layer selection though the number of layers vertically stacked is increased.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.