Plasma annealing of thin film solar cells
US8871560B2 · kind B2 · utility
2Cited by
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23Claims
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Key dates
| Filing date | Aug 9, 2012 |
| Grant date | Oct 28, 2014 |
| Priority date | — |
| Expiry date | Aug 9, 2032 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02P70/50
Abstract
Embodiments relate to a method for annealing a solar cell structure including forming an absorber layer on a molybdenum (Mo) layer of a solar cell base structure. The solar cell base structure includes a substrate and the Mo layer is located on the substrate. The absorber layer includes a semiconductor chalcogenide material. Annealing the solar cell base structure is performed by exposing an outer layer of the solar cell base structure to a plasma.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.