Method for manufacturing thin film transistor
US8871578B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Oct 27, 2011 |
| Grant date | Oct 28, 2014 |
| Priority date | — |
| Expiry date | Nov 5, 2031 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D86/60
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A method for manufacturing a thin film transistor includes forming a semiconductor layer, a wiring layer and a patterned mask layer in sequence on a substrate on which a gate electrode and a gate insulating layer are formed; patterning the wiring layer and the semiconductor layer based on the patterned mask layer while irradiating external light; removing at least a part of the mask layer; forming a channel portion by etching the wiring layer while controlling irradiation of the external light. Further, the method for manufacturing the thin film transistor can obtain an improved structure by forming the semiconductor layer made of an oxide which reacts to external light irradiated thereto, thus capable of adjusting a selectivity between the semiconductor layer and the wiring layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.