Method for fabricating backside-illuminated sensors
US8871608B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 21, 2012 |
| Grant date | Oct 28, 2014 |
| Priority date | — |
| Expiry date | Dec 28, 2032 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02E10/50
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for fabricating a backside-illuminated sensor includes providing a thin film semiconductor lamina having a first conductivity, and forming a doped region having a second conductivity within the lamina and at a front surface of the lamina. The lamina may be provided as a free-standing lamina, or may be provided as a semiconductor donor body from which the lamina is cleaved. An electrical connection is formed to the doped region. A temporary carrier is contacted to the back surface of the semiconductor and later removed. A backside-illuminated sensor is fabricated from the semiconductor lamina, in which the thickness of the semiconductor lamina remains substantially unchanged during the fabrication process.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.