Methods of fabricating thin film transistor and organic light emitting diode display device having the same
US8871616B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 5, 2010 |
| Grant date | Oct 28, 2014 |
| Priority date | — |
| Expiry date | Nov 4, 2032 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10K59/1213
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A thin film transistor (TFT), an OLED device having the TFT and a method of fabricating the same and a method of fabricating an organic light emitting diode (OLED) display device that includes the TFT. The method of fabricating a TFT includes providing a substrate, forming a buffer layer on the substrate, forming an amorphous silicon layer pattern on the buffer layer, forming a metal layer on an entire surface of the substrate, forming a semiconductor layer by applying an electrical field to the metal layer to crystallize the amorphous silicon layer pattern, forming source and drain electrodes connected to the semiconductor layer by patterning the metal layer, forming a gate insulating layer on the entire surface of the substrate, forming a gate electrode on the gate insulating layer to correspond to the semiconductor layer and forming a protective layer on the entire surface of the substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.