Semiconductor devices and methods of manufacture thereof
US8871639B2 · kind B2 · utility
10Cited by
4References
20Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jan 4, 2013 |
| Grant date | Oct 28, 2014 |
| Priority date | — |
| Expiry date | Jan 13, 2033 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02P80/30
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Semiconductor devices and methods of manufacture thereof are disclosed. In one embodiment, a method of manufacturing a semiconductor device includes providing a workpiece including an insulating material layer disposed thereon. The insulating material layer includes a trench formed therein. The method includes forming a barrier layer on the sidewalls of the trench using a surface modification process and a surface treatment process.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.