Highly dielectric film
US8871850B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 27, 2011 |
| Grant date | Oct 28, 2014 |
| Priority date | — |
| Expiry date | Jan 24, 2032 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T428/31699
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
There is provided a highly dielectric film which has high dielectric property, can be formed into a think film and is excellent in winding property (flexibility). The highly dielectric film comprises (A) a vinylidene fluoride polymer, (B) barium titanate oxide particles and/or lead zirconium titanate oxide particles, and (C) an affinity improving agent, wherein the barium titanate oxide particles and/or lead zirconium titanate oxide particles (B) and the affinity improving agent (C) are contained in amounts of 10 to 500 parts by mass and 0.01 to 30 parts by mass, respectively based on 100 parts by mass of the vinylidene fluoride polymer (A).
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.