Field effect transistor fabrication from carbon nanotubes
US8872154B2 · kind B2 · utility
7Cited by
36References
15Claims
0Family size
Assignee
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Key dates
| Filing date | Apr 6, 2010 |
| Grant date | Oct 28, 2014 |
| Priority date | — |
| Expiry date | Oct 31, 2032 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10K85/221
- WIPO fieldMicro-structural and nano-technology
- WIPO sectorChemistry
Abstract
Methods and apparatus for an electronic device such as a field effect transistor. One embodiment includes fabrication of an FET utilizing single walled carbon nanotubes as the semiconducting material. In one embodiment, the FETs are vertical arrangements of SWCNTs, and in some embodiments prepared within porous anodic alumina (PAA). Various embodiments pertain to different methods for fabricating the drains, sources, and gates.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.